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TIP120 – Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 65 W, 5 A, 1000 hFE – 1pc
- Collector to emitter voltage (Vce) is 60V
- Collector current (Ic) is 5A
- Power dissipation (Pd) is 65W
- Collector to emitter saturation voltage of 4V at 5A collector current
- DC current gain (hFE) of 1000
- Operating junction temperature range from 150°C
Availability:
1 in stock
₹45.00 ₹99.00
1 in stock
The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high gain performance coupled with very low saturation voltage.
- Collector to emitter voltage (Vce) is 60V
- Collector current (Ic) is 5A
- Power dissipation (Pd) is 65W
- Collector to emitter saturation voltage of 4V at 5A collector current
- DC current gain (hFE) of 1000
- Operating junction temperature range from 150°C
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Warnings
Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
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